Delivery and installation of a ICP Reactive ion etcher for silicon dielctrics
Danmarks Tekniske Universitet - DTU needs an ICP Reactive ion etcher for silicon dielectrics, to be delivered and installed in the DTU Nanolab cleanroom in the Copenhagen area. The instrument must support the full spectrum of etching of silicon-based dielectrics, from sub 100 nm nanostructures to depths of several tens of microns, requiring exceptional process controllability and tunability for ultra-precise, low-rate etches (< 100 nm/min) and high etch rate deep etches (approaching 500 nm/min). It must accommodate all silicon dielectrics of the form SixNy, SixOx, and SixOyNz, and be compatible with mask materials including Si, Cr, e-beam resists, and UV/DUV photoresists with high mask selectivity. The instrument must be configured for 150 mm wafer processing, with an option for a complete kit for 200 mm wafer processing. DTU will also have the option to purchase one additional identical instrument. Award criteria are Functionality and performance (50%), Quality of submitted samples (30%), and Price (20%).
About the bid
- Contact name
- Mikkel Taanum
- Contact phone
- +45 20133820
- Contact email
- miktaa@dtu.dk
- Address
- Anker Engelunds Vej 1, 2800 Kgs. Lyngby
DTU Nanolab wishes to acquire a high ion density source reactive ion etcher for oxides and nitrides of silicon to become its new primary instrument for 150 mm wafer processing. Delivery is expected no later than Q3 2027. The Instrument will be installed in the DTU Nanolab cleanroom - a university facility providing a comprehensive suite of micro- and nanofabrication tools. It serves a diverse community of over 200 active users, ranging from novice students to experienced researchers, as well a high percentage of commercial clients. As an open access tool, the Instrument must support the full spectrum of etching of silicon-based dielectrics, from sub 100 nm nanostructures defined by electron beam lithography to depths of several tens of microns. Meeting these demands requires exceptional process controllability and tunability: the system must perform ultra precise, low-rate etches (< 100 nm/min) with smooth and straight sidewalls and minimal undercut for shallow features, alongside high etch rate deep etches (approaching 500 nm/min). It must also accommodate all silicon dielectrics of the form SixNy, SixOx and SixOyNz, and be compatible with mask materials including Si, Cr, e-beam resists and UV/DUV photoresists with high mask selectivity for all these masking materials. The user interface must be intuitive and user friendly. The Instrument should be engineered to the highest industrial standards to minimize maintenance, and any required servicing must be straightforward and efficient. The instrument must be configured for 150 mm wafer processing and a complete kit enabling the processing of 200 mm wafers must be included in the tender as an option. Furthermore, DTU will have the option to purchase one more ICP Reactive ion etcher for silicon dielctrics identical to the initial instrument.
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Award Criteria
Description
The price for the instrument
Description
The functionality and performance of the tender, based on the tenderers response to appendix 1.
Description
The quality of submitted samples, as described in appendix 1
Qualification requirements
Found no qualification requirements in the contract notice.
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See the full notice
- Contracting authority
- Danmarks Tekniske Universitet - DTU
- Title
- Delivery and installation of a ICP Reactive ion etcher for silicon dielctrics
- Type
- Main code
- Supplemental codes
- Location
- Københavns omegn